Characterization of GaInP/GaAs triple barrier resonant tunneling diodes fabricated by fast atom beam etching process
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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OKUMURA T.
Department of Physics, Tokyo Institute of Technology
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Horie H.
Department Of Electrical Engineering Graduate School Of Engineering Tokyo Metropolitan University
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Asaoka N.
Department Of Electrical Engineering Graduate School Of Engineering Tokyo Metropolitan University
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Fukumitsu M.
Department Of Electrical Engineering Graduate School Of Engineering Tokyo Metropolitan University
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SUHARA M.
Department of Electrical Engineering, Graduate School of Engineering, Tokyo Metropolitan University
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Suhara M.
Department Of Electrical Engineering Graduate School Of Engineering Tokyo Metropolitan University
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