Optical Responsivity Enhanced InGaAs/InP Heterojunction Phototransistor Arrays
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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Jo Young-chang
Nano-scale Quantum Research Center Keti(korea Electronics Technology Institute)
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Jo Young
Nano-scale Quantum Research Center Keti(korea Electronics Technology Institute)
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KIM Hoon
Nano-scale Quantum Research Center, KETI(Korea Electronics Technology Institute)
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CHOI Pyong
School of Electrical Eng. & Computer Science, Kyungpook National Univ.
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Choi Pyong
School Of Electrical Eng. & Computer Science Kyungpook National Univ.
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Joe Seuk-Jin
Department of Electrical Engineering And Computer Science, KAIST, Daejon 305-701, Korea
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Joe Seuk-jin
Department Of Electrical Eng. & Computer Science Kaist
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Kim Hoon
Nano-scale Quantum Research Center Keti(korea Electronics Technology Institute)
関連論文
- Design and Characterization of 1 by 128 Linear Arrays of Sensitivity Improved InGaAs/InP NIR Photodetector
- Optical Characteristics of Responsivity-Enhanced InGaAs/InP Heterojunction Phototransistors
- Optical Responsivity Enhanced InGaAs/InP Heterojunction Phototransistor Arrays
- Design and Characterization of $1\times 128$ In0.53Ga0.47As/InP Photodetector Linear Array with Improved Optical Sensitivity and Shunt Resistance
- Design and Optical Characterization of Passive Pixel with Sensitivity-Improved InGaAs/InP Phototransistors Considering Light-Dependent Shunt Resistance for Near Infrared Imaging Applications