Novel properties of erbium-silicided n-type Schottky barrier MOSFETs
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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LEE Seongjae
Electronics and Telecommunications Research Institute
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Lee Seongjae
It Convergence Technology Research Division Electronics And Telecommunications Research Institute (e
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Jang Moongyu
It Convergence Technology Research Division Electronics And Telecommunications Research Institute (e
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Kim Yarkyeon
It Convergence Technology Research Division Electronics And Telecommunications Research Institute (e
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JANG Moongyu
Electronics and Telecommunications Research Institute, Future technology Research Division
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KIM Yarkyeon
Electronics and Telecommunications Research Institute, Future technology Research Division
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SHIN Jaeheon
Electronics and Telecommunications Research Institute, Future technology Research Division
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Shin Jaeheon
Electronics And Telecommunications Research Institute Future Technology Research Division
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- Novel properties of erbium-silicided n-type Schottky barrier MOSFETs