High-Perfection Approaches to Si-based Devices through Strained Layer Epitaxy
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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Yin Haizhou
Princeton Institute For The Science And Technology Of Materials And Department Of Electrical Enginee
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Sturm J.
Princeton Institute For The Science And Technology Of Materials And Department Of Electrical Enginee
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PETERSON R
Princeton Institute for the Science and Technology of Materials and Department of Electrical Enginee
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HOBART K.
Naval Research Laboratory
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KUB F.
Naval Research Laboratory
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Peterson R
Princeton Institute For The Science And Technology Of Materials And Department Of Electrical Enginee