New ONO Layer Using Nitrogenized Bottom Oxide for Flash Memory Application
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概要
- 論文の詳細を見る
- 1999-09-20
著者
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Lin C.
R&d Division Taiwan Semiconductor Manufacturing Company (tsmc)
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LIN C.
R&D Division, Taiwan Semiconductor Manufacturing Company (TSMC)
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CHEN J.
R&D Division, Taiwan Semiconductor Manufacturing Company (TSMC)
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SU H.
R&D Division, Taiwan Semiconductor Manufacturing Company (TSMC)
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SHIH J.
R&D Division, Taiwan Semiconductor Manufacturing Company (TSMC)
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KUO D.
R&D Division, Taiwan Semiconductor Manufacturing Company (TSMC)
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LIANG M.
R&D Division, Taiwan Semiconductor Manufacturing Company (TSMC)
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Shih J.
R&d Division Taiwan Semiconductor Manufacturing Company (tsmc)
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Liang M.
R&d Division Taiwan Semiconductor Manufacturing Company (tsmc)