Influence of Interface Structure on Schottky Barrier Heights of α-Al_2O_3(0001)/Ni(111) interfaces : A First-Principles Study
スポンサーリンク
概要
- 論文の詳細を見る
- Japan Institute of Metalsの論文
- 2006-11-20
著者
-
KOHYAMA Masanori
Materials Science Research Group, Research Institute for Ubiquitous Energy Devices, National Institu
-
Tanaka Shingo
Materials Science Research Group Research Institute For Ubiquitous Energy Devices National Institute
-
Tanaka Shingo
Materials Science Research Group Research Institute For Ubiquitous Energy Devices National Institute
-
SHI Siqi
Materials Science Research Group, Research Institute for Ubiquitous Energy Devices, National Institu
-
Shi Siqi
Materials Science Research Group Research Institute For Ubiquitous Energy Devices National Institute
-
Kohyama Masanori
Materials Science Research Group Research Institute For Ubiquitous Energy Devices National Institute
-
Kohyama Masanori
Materials Science Research Group Research Institute For Ubiquitous Energy Devices National Institute
関連論文
- First-Principles Study of Molecule/Al Interfaces
- Influence of Interface Structure on Schottky Barrier Heights of α-Al_2O_3(0001)/Ni(111) interfaces : A First-Principles Study