ナノメートルCMOSデバイスの課題と展望
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概要
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Nanoscale transistors are discussed in ballistic transport regime. Mechanism of operation as well as characteristics of the ballistic MOFET are analyzed in comparison to experimental devices. Carbon nanotube FETs are introduced briefly. A limitation to CMOS circuit operation due to thermal noise is also discussed.
- 社団法人 電気学会の論文
- 2006-06-01