Observation of the Electron Reflection from N^-/N^+ Junction in GaAs by Resonant Tunneling through Pseudoquantum Well in Single Barrier Heterostructure
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概要
- 論文の詳細を見る
- 1995-08-21
著者
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Dubrovskii Yu.
Institute Of Microelectronics Technology And High Purity Material Russian Academy Of Sciences
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Andersson T.
Department Of Physics Chalmers University Of Technology
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KHANIN Yu.
Institute of Microelectronics Technology and High Purity Material Russian Academy of Sciences
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VDOVIN E.
Institute of Microelectronics Technology and High Purity Material Russian Academy of Sciences
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LARKIN I.
Institute of Microelectronics Technology, Russian Academy of Sciences
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Larkin I.
Institute Of Microelectronics Technology Russian Academy Of Sciences
関連論文
- Γ-X Tunneling in GaAs/AlAs/GaAs Heterostructure
- Observation of the Electron Reflection from N^-/N^+ Junction in GaAs by Resonant Tunneling through Pseudoquantum Well in Single Barrier Heterostructure