Effects of Implanted Dopants in the LDD Region on the Short Channel Effect of a Deep Sub-Micron MOS Device
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概要
- 論文の詳細を見る
- 1995-08-21
著者
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Lee M.
Basic Research Team Memory Device Business Samsung Electronics Co.
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Park J.
Basic Research Team Memory Device Business Samsung Electronics Co.
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Shim T.
Basic Research Team Memory Device Business Samsung Electronics Co.
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KOO B.
Basic Research Team, Memory Device Business, Samsung Electronics, Co.
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JUNG D.
Basic Research Team, Memory Device Business, Samsung Electronics, Co.
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KANG N.
Basic Research Team, Memory Device Business, Samsung Electronics, Co.
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Koo B.
Basic Research Team Memory Device Business Samsung Electronics Co.