Highly Manufacturable Shallow Trench Isolation for Giga Bit DRAM
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概要
- 論文の詳細を見る
- 1995-08-21
著者
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Park J.
R&d Center Samsung Electronics Co. Ltd.
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Kim K.
R&d Center Samsung Electronics Co. Ltd.
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ROH B.
R&D Center, Samsung Electronics Co., LTD.
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CHO Y.
R&D Center, Samsung Electronics Co., LTD.
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SHIN Y.
R&D Center, Samsung Electronics Co., LTD.
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HONG C.
R&D Center, Samsung Electronics Co., LTD.
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GWUN S.
R&D Center, Samsung Electronics Co., LTD.
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LEE K.
R&D Center, Samsung Electronics Co., LTD.
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KANG H.
R&D Center, Samsung Electronics Co., LTD.
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KIM K.
R&D Center, Samsung Electronics Co., LTD.
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PARK J.
R&D Center, Samsung Electronics Co., LTD.
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Kang H.
R&d Center Samsung Electronics Co. Ltd.
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Lee K.
R&d Center Samsung Electronics Co. Ltd.
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Gwun S.
R&d Center Samsung Electronics Co. Ltd.
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Roh B.
R&d Center Samsung Electronics Co. Ltd.
関連論文
- Highly Manufacturable Shallow Trench Isolation for Giga Bit DRAM
- Parameter estimation of ASM3+Bio-P Module for step-feed EBPR process by batch tests and CSTR operation data (第16回 環境システム計測制御学会(EICA)研究発表会) -- (研究発表 B1 特別セッション(1))