Formation of SiGe Source/Drain Using Ge Implantation for Floating-Body Effect Resistant SOI MOSFETs
スポンサーリンク
概要
- 論文の詳細を見る
- 1995-08-21
著者
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Terauchi M.
Ulsi Research Laboratories R & D Center Toshiba Corp.
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NISHIYAMA A.
ULSI Research Laboratories, R & D Center, Toshiba Corp.
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ARISUMI O.
ULSI Research Laboratories, R & D Center, Toshiba Corp.
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YOSHIMI M.
ULSI Research Laboratories, R & D Center, Toshiba Corp.
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TAKENO S.
Environmental Engineering Laboratory, R & D Center, Toshiba Corp.
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SUZUKI K.
Environmental Engineering Laboratory, R & D Center, Toshiba Corp.
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Arisumi O.
Ulsi Research Laboratories R & D Center Toshiba Corp.
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Takeno S.
Environmental Engineering Laboratory R & D Center Toshiba Corp.