On the Use of Indium and Gallium as P-Type Dopants in Si 0.1μm MOSFETs
スポンサーリンク
概要
- 論文の詳細を見る
- 1995-08-21
著者
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Biesemans Serge
Asp Division Imec
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Kubicek Stefan
Asp Division Imec
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VANLAER Joris
ASP division, IMEC
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LOOSEN Fred
ASP division, IMEC
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GEENEN Luc
ASP division, IMEC
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MAEX Karen
ASP division, IMEC
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DEMEYER Kristin
ASP division, IMEC
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Maex Karen
Asp Division Imec
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Geenen Luc
Asp Division Imec
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Vanlaer Joris
Asp Division Imec
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Demeyer Kristin
Asp Division Imec
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Loosen Fred
Asp Division Imec