Simulation of Enhanced Drain Current Characteristics in a MOSFET with a Quantum Wire Structure Incorporating a Periodically Bent Si-SiO_2 Interface

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概要

• 論文の詳細を見る
• 1995-08-21

著者

• Sawada Akemi

  Central Research Laboratory Hitachi Ltd.

• TANAKA Junko

  Central Research Laboratory, Hitachi, Ltd.

• Tanaka Junko

  Central Research Laboratory Hitachi Ltd.

関連論文

• Simulation of Enhanced Drain Current Characteristics in a MOSFET with a Quantum Wire Structure Incorporating a Periodically Bent Si-SiO_2 Interface

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