Stacked Multi-Quantum-Wires Grown on Vicinal GaAs(110) Surfaces by MBE
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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HASEGAWA Shigehiko
Institute of scientific and industrial research, Osaka University
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NAKASHIMA Hisao
Institute of scientific and industrial research, Osaka University
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Takeuchi Toshikazu
Institute Of Scientific And Industrial Research Osaka University
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Hasegawa Shigehiko
Institute Of Scientific And Industrial Research Osaka University
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Kato Takehiko
Institute Of Scientific And Industrial Research Osaka University
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INOUE Koichi
Institute for Solid State Physics,The University of Tokyo
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INOUE Yoshiji
Institute of Scientific and Industrial Research, Osaka University
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Inoue Yoshiji
Institute Of Scientific And Industrial Research Osaka University
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Inoue Koichi
Institute For Solid State Physics The University Of Tokyo:department Of Physics Osaka University
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Nakashima Hisao
Institute Of Scientific And Industrial Research Osaka University
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Inoue Koichi
Institute Of Scientific And Industrial Research Osaka University
関連論文
- Scanning Tunneling Microscopy Study of Submicron-Sized pn Junction on Si(001) Surfaces
- Relaxation Processes of Electronic Excited States in Solid Neon,Argon and Krypton
- Stacked Multi-Quantum-Wires Grown on Vicinal GaAs(110) Surfaces by MBE
- Structure Analysis of Composition Modulation in Epitaxially-Grown III--V Semiconductor Alloys
- Structure Analysis of Composition Modulation in Epitaxially-Grown Ⅲ–Ⅴ Semiconductor Alloys (SELECTED TOPICS IN APPLIED PHYSICS : Nano Electronics and Devices : Characterization and Control of Nano Surfaces and Interfaces)