Shallow Trench Isolation for Enhancement of Data Retention Times in giga bit DRAM
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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Yoon C.
Technology Development Memory Device Business Samsung Electronics Co.
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Park J.
Technical Research Laboratories Of Posco
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Kim K.
Technology Development Memory Device Business Samsung Electronics Co.
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Park J.
Technology Development Memory Device Business Samsung Electronics Co.
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ROH B.
Technology Development, Memory Device Business, Samsung Electronics, Co.
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CHOI D.
Technology Development, Memory Device Business, Samsung Electronics, Co.
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KIM M.
Technology Development, Memory Device Business, Samsung Electronics, Co.
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HA D.
Technology Development, Memory Device Business, Samsung Electronics, Co.
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Kim M.
Technology Development Memory Device Business Samsung Electronics Co.
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Roh B.
Technology Development Memory Device Business Samsung Electronics Co.
関連論文
- Effect of Alloying Elements on the Magnetic Properties of Sn-Ni-Cu-added Non-oriented Electrical Steels
- Shallow Trench Isolation for Enhancement of Data Retention Times in giga bit DRAM