Mobility Limiting Factors of n-Channel Si/SiGe Modulation-Doped Systems with Varied Channel Thickness
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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Yutani Akie
Rcast University Of Tokyo
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SHIRAKI Yasuhiro
RCAST, University of Tokyo
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Shiraki Yasuhiro
Rcast University Of Tokyo
関連論文
- GaAs/AlGaAs Quantum Structures Grown in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates by MOVPE
- Mobility Limiting Factors of n-Channel Si/SiGe Modulation-Doped Systems with Varied Channel Thickness