Platinum-Enhanced Oxidation of Silicon : Formation of MOS Structure below 300℃
スポンサーリンク
概要
- 論文の詳細を見る
- 1996-08-26
著者
-
YUASA T.
Department of Physical Education, Keio University
-
Kawa H.
Department Of Chemistry Faculty Of Engineering Science And Research Center For Photoenergetics Of Or
-
Nakato Y.
Department Of Chemistry Faculty Of Engineering Science And Research Center For Photoenergetics Of Or
-
Yoneda K.
Kyoto Research Laboratory Matsushita Electronics Corporation
-
KOBAYASHI H.
PRESTO, Research Development Corporation of Japan
-
Yuasa T.
Department Of Chemistry Faculty Of Engineering Science And Research Center For Photoenergetics Of Or
関連論文
- 29. SPHYGMOGRAPH AND ELECTROCARDIOGRAPH IN ACTION
- Platinum-Enhanced Oxidation of Silicon : Formation of MOS Structure below 300℃
- Interface States for Ultrathin Chemical Oxide Layers on Si(111) and Si(100)
- Spark lonization of Semi-metallic and Metallic Elements and of Ionic-crystals