Characterization of Undoped a-Si:H by Charge Deep-Level Transient Spectroscopy
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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Durny Rudolf
Department Of Electrical And Computer Engineering Faculty Of Engineering Kanazawa University
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Durny Rudolf
Department Of Physics Faculty Of Electrical Engineering Slovak Technical University
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NADAZDY Vojtech
Institute of Physics, Slovak Academy of Sciences
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THURZO Ilja
Institute of Physics, Slovak Academy of Sciences
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Nadazdy Vojtech
Institute Of Physics Slovak Academy Of Sciences
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Thurzo Ilja
Institute Of Physics Slovak Academy Of Sciences
関連論文
- Influence of Sub-Gap Illumination on Light-Induced ESR in Undoped a-Si:H
- Grain Boundary Effect on Charge Transport in Pentacene Thin Films
- Characterization of Undoped a-Si:H by Charge Deep-Level Transient Spectroscopy
- Monitoring of Oxidation Steps of Ascorbic Acid Redox Reaction by Kinetics-Sensitive Voltcoulometry in Unsupported and Supported Aqueous Solutions and Real Samples