Characteristics of Boron and Arsenic Ultra-Shallow Junction Using Laser Annealing with Pre-Amorphization Implantation
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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PARK C.
Department of Applied Physics, Stanford University
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Kim S.
Department Ob
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Han M.
School Of Electrical Engineering Seoul National University
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MIN K.
Department of Electrical Engineering, University of California
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PRUSSIN S.
Department of Electrical Engineering, University of California
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WOO J.
Department of Electrical Engineering, University of California
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Prussin S.
Department Of Electrical Engineering University Of California
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Park C.
Department Of Electrical Engineering University Of California
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KIM S.
Department of Electrical Engineering, University of California
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