Effect of Ti Silicidation on f_<max> and Base Resistance of SiGe Hetero-Junction Bipolar Transistors
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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Shim Kyu-hwan
Sige Devices Team Micro-electronics Technology Laboratory Electronics And Telecommunications Researc
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Lee Seung-yun
Sige Devices Team Micro-electronics Technology Laboratory Electronics And Telecommunications Researc
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Kim Hong-seung
Sige Devices Team Micro-electronics Technology Laboratory Electronics And Telecommunications Researc
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KANG Jin-Yeong
SiGe Devices Team, Micro-Electronics Technology Laboratory, Electronics and Telecommunications Resea
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Kang Jin-yeong
Sige Devices Team Micro-electronics Technology Laboratory Electronics And Telecommunications Researc