In-Situ Impurity Doping in Si_<1-x-y>Ge_xC_y Epitaxial Growth Using Ultraclean LPCVD
スポンサーリンク
概要
- 論文の詳細を見る
- 2000-08-28
著者
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Murota J.
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
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Sakuraba M.
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
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LEE D.
Laboratory for Electronic Intelligent Systems Research Institute of Electrical Communication, Tohoku
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NODA T.
Laboratory for Electronic Intelligent Systems Research Institute of Electrical Communication, Tohoku
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SHIM H.
Laboratory for Electronic Intelligent Systems Research Institute of Electrical Communication, Tohoku
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MATSUURA T.
Laboratory for Electronic Intelligent Systems Research Institute of Electrical Communication, Tohoku
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Shim H.
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku University