An Experimental Study of Reliability Improvement of a Semiconductor Memory Device with a Novel Self-Protected Fuse-Box Technique Using a Poly-Si Etch Stopper
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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Park Young-hoon
Dram Process Architecture Team Memory Product & Technology Division Samsung Electronics Co. Ltd.
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Lee Chi-hoon
Dram Process Architecture Team Memory Product & Technology Division Samsung Electronics Co. Ltd.
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Han Myoung-hee
Dram Process Architecture Team Memory Product & Technology Division Samsung Electronics Co. Ltd.
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MIN Eun-Young
Dram Process Architecture Team, Memory Product & Technology Division, Samsung Electronics Co., Ltd.
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JANG Won-Hee
Dram Process Architecture Team, Memory Product & Technology Division, Samsung Electronics Co., Ltd.
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LEE Won-Sik
Dram Process Architecture Team, Memory Product & Technology Division, Samsung Electronics Co., Ltd.
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Lee Won-sik
Dram Process Architecture Team Memory Product & Technology Division Samsung Electronics Co. Ltd.
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Jang Won-hee
Dram Process Architecture Team Memory Product & Technology Division Samsung Electronics Co. Ltd.
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Min Eun-young
Dram Process Architecture Team Memory Product & Technology Division Samsung Electronics Co. Ltd.