MOSFETs with nm-Thick Gate SiO_2 Grown at Low Temperatures Utilizing Activated Oxygen
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概要
- 論文の詳細を見る
- 1998-09-07
著者
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Ueda Y.
Department of Physiology, Kansai College of Acupuncture Medicine
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Matsunami H.
Department Of Electronic Science And Engineering Kyoto University
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FUYUKI T.
Graduate School of Material Science, Nara Institute of Science and Technology
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FUTATSUYAMA T.
Department of Electronic Science and Engineering, Kyoto University
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MORIIZUMI K.
Department of Electronic Science and Engineering, Kyoto University
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Futatsuyama T.
Department Of Electronic Science And Engineering Kyoto University
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Moriizumi K.
Department Of Electronic Science And Engineering Kyoto University
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Fuyuki T.
Graduate School Of Material Science Nara Institute Of Science And Technology
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