RF Noise Study of Small Gate Width Si-MOSFETs up to 8GHz Application for Low Power Consumption
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概要
- 論文の詳細を見る
- 1998-09-07
著者
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Ohguro T.
Toshiba Corporation
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MORIFUJI E.
Toshiba Corporation
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BIBER C.
Swiss Federal Institute of Technology (ETH)
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BACHTOLD W.
Swiss Federal Institute of Technology (ETH)
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YOSHITOMI T.
Toshiba Corporation
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KIMIJIMA H.
Toshiba Corporation
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MORIMOTO T.
Toshiba Corporation
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MOMOSE H.
Toshiba Corporation
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KATSUMATA Y.
Toshiba Corporation
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IWAI H.
Toshiba Corporation
関連論文
- RF Noise Study of Small Gate Width Si-MOSFETs up to 8GHz Application for Low Power Consumption
- A High Performance 0.15μm Single Gate CMOS Technology