High-Performance Recessed Gate HFETs with New Doped Channel Structure
スポンサーリンク
概要
- 論文の詳細を見る
- 1997-09-16
著者
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Fukuda Susumu
Rf Semiconductor Products Dept. Circuit Products Division Murata Mfg. Co. Ltd.
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Seto Hiroyuki
Rf Semiconductor Products Dept. Circuit Products Division Murata Mfg. Co. Ltd.
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Inai Makoto
Rf Semiconductor Products Dept. Circuit Products Division Murata Mfg. Co. Ltd.
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Sasaki Hidehiko
Rf Semiconductor Products Dept. Circuit Products Division Murata Mfg. Co. Ltd.
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OKUI Fujio
RF Semiconductor Products Dept., Circuit Products Division, Murata Mfg. Co. Ltd.
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ARIYOSHI Hisashi
RF Semiconductor Products Dept., Circuit Products Division, Murata Mfg. Co. Ltd.
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Okui Fujio
Rf Semiconductor Products Dept. Circuit Products Division Murata Mfg. Co. Ltd.
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Ariyoshi Hisashi
Rf Semiconductor Products Dept. Circuit Products Division Murata Mfg. Co. Ltd.
関連論文
- Doped Channel HFET with Effective Lateral Energy Modulation for High Power Enhancement Operation
- High-Performance Recessed Gate HFETs with New Doped Channel Structure