Sub-0.25μm Devices and 16K SRAM with Selective-Epi Source/Drain on Ultra-Thin SOI
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概要
- 論文の詳細を見る
- 1997-09-16
著者
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Faynot O.
Leti (cea/grenoble)
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Faynot O.
Leti (cea-grenoble)
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RAYNAUD C.
LETI (CEA/Grenoble)
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PELLOIE JL.
LETI (CEA-Grenoble)
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MARGAIL J.
LETI (CEA-Grenoble)
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FERLET V.
CEA Bruyeres le Chatel
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QUEMENEUR A.
CEA Bruyeres le Chatel
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WESTHOFF R.
LSRL
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ROBINSON McD.
LSRL
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Raynaud C.
Leti (cea-grenoble)
関連論文
- Comparative Analysis of SOI Floating-Body and DTMOS with Bulk Devices for 1V Operation
- Sub-0.25μm Devices and 16K SRAM with Selective-Epi Source/Drain on Ultra-Thin SOI