Invited Application of Photonic Crystals to LED (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))

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概要

• 論文の詳細を見る

• We have integrated the photonic crystal on the surface of GaN light emitting diode (LED) in order to enhance the extraction efficiency. ITO hole patterns with period of 700nm have been fabricated on the surface of LED. This reveals an enhancement by 35% on the wafer level measurement, but the enhancement reduced to about 10% for packaged LED. With the FDTD (finite-difference time-domain) simulation, we have calculated that 70% of light energy is confined in the GaN layer. So that further enhancement will be achieved by the GaN-etched photonic crystals.

• 社団法人電子情報通信学会の論文
• 2005-06-22

著者

• Kim Hye

  Lg Electronics Institute Of Technology Lg Electronics

• Lee Bum

  Lg Electronics Institute Of Technology Lg Electronics

• CHOE Young

  LG Electronics Institute of Technology, LG Electronics

• Choe Young

  Lg Electronics Institute Of Technology Lg Electronics

関連論文

• Invited Application of Photonic Crystals to LED (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
• Invited Application of Photonic Crystals to LED (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))

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