Low Phase Noise, InGaP/GaAs HBT VCO MMIC for Millimeter-Wave Applications(Compound Semiconductor Devices, <Special Section>Fundamental and Application of Advanced Semiconductor Devices)

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概要

• 論文の詳細を見る

• A fully integrated voltage controlled oscillator (VCO) MMIC for millimeter-wave applications has been designed and implemented in InGaP/GaAs heterojunction bipolar transistor (HBT) technology. To achieve a fully integrated VCO, a base-emitter diode is employed as the tuning varactor, and microstrip lines are employed for the transmission lines. The fabricated VCO MMIC chip size is 0.86 mm×1.34 mm and delivers an output power of 5.1 dBm at 28.7 GHz and a free-running phase noise of-118 dBc/Hz at 1 MHz offset. The dc current consumption is only 20 mA.

• 社団法人電子情報通信学会の論文
• 2005-04-01

著者

• YOSHIMASU Toshihiko

  Graduate School of Information, Production and Systems, Waseda University

• Kurachi Satoshi

  Graduate School Of Information Production And Systems Waseda University

• Yoshimasu Toshihiko

  Graduate School Of Information Production And Systems Waseda University

関連論文

• A 1.2-3.2GHz CMOS VCO IC Utilizing Transformer-Based Variable Inductors and AMOS Varactors
• An Ultra-Wideband Amplifier MMIC for 3-10.6 GHz Wireless Applications with InGaP/GaAs HBT Technology
• A SiGe BiCMOS VCO IC with Highly Linear Kvco for 5-GHz-Band Wireless LANs(Analog Circuits and Related SoC Integration Technologies)
• Low Phase Noise, InGaP/GaAs HBT VCO MMIC for Millimeter-Wave Applications(Compound Semiconductor Devices, Fundamental and Application of Advanced Semiconductor Devices)
• A Broadband High Suppression Frequency Doubler IC for Sub-Millimeter-Wave UWB Applications
• A 1.2-3.2GHz CMOS VCO IC Utilizing Transformer-Based Variable Inductors and AMOS Varactors
• A 66-dBc Fundamental Suppression Frequency Double IC for UWB Sensor Applications
• A CMOS Class-G Supply Modulation for Polar Power Amplifiers with High Average Efficiency and Low Ripple Noise

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