Composite-Collector InGaP/GaAs HBTs for Linear Power Amplifiers(Compound Semiconductor Devices, <Special Section>Fundamental and Application of Advanced Semiconductor Devices)

概要

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The linear operation of a HBT with a GaAs/InGaP composite collector structure is demonstrated. The composite collector structure allows for a thin collector design that is suitable for the linear operation of a HBT without critical degradation of the breakdown voltage. The load pull measurements under a 1.95 GHz WCDMA signal have shown that a composite-collector HBT with a 400-nm thick collector layer operates with power-added-efficiency (PAE) as high as 53% at V_<CE>=3.5 V as a result of improved distortion characteristics. Despite the thin collector design, collector-emitter breakdown voltage of 11 V was achieved even at current density of 10 kA/cm^2. The composite-collector HBT has even greater advantage for future low voltage (<3 V) applications where maintaining PAE and linearity becomes one of the critical issues.
社団法人電子情報通信学会の論文
2005-04-01