Manufacturable 0.13μm DRAM Technology for 512M DDR DRAM
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概要
- 論文の詳細を見る
- 2001-09-25
著者
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Yi Seung-ho
Tg-1/p1 Memory Research Development Division Hynix Semiconductor
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Park Jae-beom
Tg-1/p1 Memory Research Development Division Hynix Semiconductor
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Kim Dae-young
Tg-1/p1 Memory Research Development Division Hynix Semiconductor
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Hong Byung-seop
Tg-1/p1 Memory Research Development Division Hynix Semiconductor
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KIM Yong-Hae
TG-1/P1 Memory Research Development Division, Hynix Semiconductor
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YIM Dong-Gyu
TG-1/P1 Memory Research Development Division, Hynix Semiconductor
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KIM Jun-Ki
TG-1/P1 Memory Research Development Division, Hynix Semiconductor
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CHOI Jong-Moo
TG-1/P1 Memory Research Development Division, Hynix Semiconductor
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LEE Dong-Duk
TG-1/P1 Memory Research Development Division, Hynix Semiconductor
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YOON Gyu-Han
TG-1/P1 Memory Research Development Division, Hynix Semiconductor
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Choi Jong-moo
Tg-1/p1 Memory Research Development Division Hynix Semiconductor
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Kim Jun-ki
Tg-1/p1 Memory Research Development Division Hynix Semiconductor
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Yim Dong-gyu
Tg-1/p1 Memory Research Development Division Hynix Semiconductor
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Yoon Gyu-han
Tg-1/p1 Memory Research Development Division Hynix Semiconductor
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Kim Yong-hae
Tg-1/p1 Memory Research Development Division Hynix Semiconductor
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Lee Dong-duk
Tg-1/p1 Memory Research Development Division Hynix Semiconductor