Interface Properties between Ni and p-GaN Studied by Photoemission Spectroscopy

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概要

• 論文の詳細を見る
• 2001-09-25

著者

• Maruyama T.

  Dept. of Physics, Kyoto Univ.

• Kijima S.

  Sony Corporation Research Center

• Miyajima T.

  Sony Corporation Research Center

• HAGIO Y.

  Inst. of Applied Physics, Univ. of Tsukuba

• NANISHI Y.

  Dept. of Photonics, Ritsumeikan Univ.

• AKIMOTO K.

  Inst. of Applied Physics, Univ. of Tsukuba

• Nanishi Y.

  Dept. Of Photonics Ritsumeikan Univ.

• Hagio Y.

  Inst. Of Applied Physics Univ. Of Tsukuba

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• Interface Properties between Ni and p-GaN Studied by Photoemission Spectroscopy
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