Spin-Drying with CO_2 Gas Purge for 0.13μm DRAM's Contact Process
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概要
- 論文の詳細を見る
- 2001-09-25
著者
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TOMITA Hiroshi
Process Engineering Lab., Toshiba Corp. Semiconductor company
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Okuchi Hisashi
Process Engineering Lab. Toshiba Corp. Semiconductor Company
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Nadahara Soichi
Process Engineering Lab. Toshiba Corp. Semiconductor Company
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Nadahara Soichi
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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OGAWA Yoshihiro
Process and Manufacturing Engineering center., Toshiba Corp. Semiconductor company
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MIYAZAKI Kunihiro
Process and Manufacturing Engineering center., Toshiba Corp. Semiconductor company
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TAKASE Kazuhiko
Process and Manufacturing Engineering center., Toshiba Corp. Semiconductor company
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Miyazaki Kunihiro
Process And Manufacturing Engineering Center. Toshiba Corp. Semiconductor Company
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Takase Kazuhiko
Process And Manufacturing Engineering Center. Toshiba Corp. Semiconductor Company
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Tomita Hiroshi
Process Engineering Lab. Toshiba Corp. Semiconductor Company
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Ogawa Yoshihiro
Process And Manufacturing Engineering Center. Toshiba Corp. Semiconductor Company
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TOMITA Hiroshi
Process and Manufacturing Engineering center., Toshiba Corp. Semiconductor company
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OKUCHI Hisashi
Process and Manufacturing Engineering center., Toshiba Corp. Semiconductor company
関連論文
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- Spin-Drying with CO_2 Gas Purge for 0.13μm DRAM's Contact Process
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