Some Aspects of Bit-Writing for High Density MRAM
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概要
- 論文の詳細を見る
- 2004-09-21
著者
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Kim K.
Nano Device Research Center Korea Institute Of Science And Technology
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Lim S.
Nano Device Research Center Korea Institute Of Science And Technology
関連論文
- Role of Induced Anisotropy in the Spin-Flop Switching of Circular Cells for Magnetic Random Access Memory
- Some Aspects of Bit-Writing for High Density MRAM