Ultrabroadband Emission Spectrum from a Reverse-Biased 4H-SiC p–n Junction Diode

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概要

• 論文の詳細を見る

• We measured the light-emission spectrum from a reverse-biased 4H-SiC p–n junction diode under the avalanche condition. The diode was fabricated with the edge of the mesa being negatively beveled. Avalanche breakdown occurred at the periphery where the p–n junction intercepted the surface. As a result, the emission showed a broadband spectrum containing ultraviolet, visible, and near-infrared regions. This is the first observation of the ultraviolet emission from a reverse-biased SiC diode.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2004-10-15

著者

• Arai Manabu

  Microwave Division New Japan Radio Co. Lid.

• Arai Manabu

  Microwave Division New Japan Radio Co. Ltd.

• Ono Shuichi

  Microwave Division New Japan Radio Co. Lid.

• Ono Shuichi

  Microwave Division New Japan Radio Co. Ltd.

• Kimura Chikao

  New Japan Radio Co., Ltd., 2-1-1 Fukuoka Kamifukuoka, Saitama 356-8510, Japan

• Kimura Chikao

  New Japan Radio Co. Ltd.

関連論文

• Development of High-Frequency SiC-MESFET
• Ultrabroadband Emission Spectrum from a Reverse-Biased 4H-SiC p–n Junction Diode

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