InGaAsP/InP Laser Diodes Monolithically Integrated with Waveguide-Type Light Deflectors
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概要
- 論文の詳細を見る
A ridge waveguide-type InGaAsP/InP laser diodes monolithically integrated with light deflectors (DLDs) were fabricated and light deflection was demonstrated, for the first time. The light deflection was simulated and measured in a fabricated device. The output beam deflection in a fabricated device was controlled by carrier induced refractive index change of the deflector. The maximum beam deflection angle of 3.12° was obtained at an applied current of 15 mA.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-04-15
著者
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Kim Sok
Department Of Physics University Of Ulsan
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Oh Kwang
Electronics And Telecommunications Research Institute
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Kim Jong-hoi
Electronics And Telecommunications Research Institute
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Kim Kang
Electronics And Telecommunications Research Institute
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Kwon Oh
Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350
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Kim Hyun
Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350
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Sim Eun
Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350
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Sim Eun
Electronics And Telecommunications Research Institute
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Kim Hyun
Electronics And Telecommunications Research Institute
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Kwon Oh
Electronics And Telecommunications Research Institute
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