Crystal growth of an InAs-GaAs binary semiconductor by the Travelling Liquidus Zone Method

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概要

• 論文の詳細を見る
• 2002-07-01

著者

• MATSUMOTO Satoshi

  National Space Development Agency of Japan

• Maekawa Toru

  Toyo University

• SUGIKI Yoshihiro

  Toyo University

• Matsumoto S

  Kyushu Inst. Of Technol. Kitakyushu

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• Crystal growth of an InAs-GaAs binary semiconductor by the Travelling Liquidus Zone Method

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