INFLUENCE OF INCIDENT O_2 TRANSLATIONAL ENERGY TO INITIAL OXIDATION OF Si(001) SURFACE
スポンサーリンク
概要
著者
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TERAOKA Y.
Synchrotron Radiation Research Center, Japan Atomic Energy Research Institute
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Yoshigoe A.
Synchrotron Radiation Research Center Japan Atomic Energy Research Institute
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Yoshigoe A.
Synchrotron Radiation Research Center Jaeri
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SANO M.
Synchrotron Radiation Research Center, Japan Atomic Energy Research Institute
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Teraoka Y.
Synchrotron Radiation Research Center Japan Atomic Energy Research Institute
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Teraoka Y.
Synchrotron Radiation Research Center Jaeri
関連論文
- CONTROL OF O_2 ADSORPTION AND SiO DESORPTION BY INCIDENT ENERGY OF O_2 MOLECULES IN THE O_2/Si(001) SURFACE REACTION SYSTEM
- O_2 REACTION DYNAMICS WITH Si(001) SURFACES AS OBSERVED BY SYNCHROTRON RADIATION PHOTOEMISSION SPECTROSCOPY
- INFLUENCE OF INCIDENT O_2 TRANSLATIONAL ENERGY TO INITIAL OXIDATION OF Si(001) SURFACE
- REAL-TIME OBSERVATION OF OXIDATION STATES ON Si(001)-2x1 DURING SUPERSONIC O_2 MOLECULAR BEAM IRRADIATION
- PHOTOEMISSION SPECTROSCOPY ON INITIAL OXIDATION OF Si(001) INDUCED BY O_2 TRANSLATIONAL ENERGY USING SYNCHROTRON RADIATION