A 286 mm^2 256 Mb DRAM with ×32Both-Ends DQ
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概要
- 論文の詳細を見る
- 1996-07-25
著者
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Kato Daisuke
Department Of Astronomy Graduate School Of Science The University Of Tokyo
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Kato Daisuke
Science Solution Group Fuji Research Institute Corporation
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Kirihara Toshiaki
Ibm Semiconductor Research And Development Center Hopewell Junction
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Yoshida Munehiro
Ibm Semiconductor Research And Development Center Hopewell Junction
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Kato Daisuke
Department Of Astrophysics Nagoya University
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Nagai Takeshi
C/o Ibm Semiconductor Research And Development Center
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WATANABE Yohji
c/o IBM Semiconductor Research and Development Center
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WONG Hing
the IBM Semiconductor Research and Development Center
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KIRIHATA Toshiaki
the IBM Semiconductor Research and Development Center
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KATO Daisuke
c/o IBM Semiconductor Research and Development Center
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DEBROSSE John
the IBM Semiconductor Research and Development Center
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HARA Takahiko
c/o IBM Semiconductor Research and Development Center
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YOSHIDA Munehiro
c/o IBM Semiconductor Research and Development Center
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MUKAI Hideo
c/o IBM Semiconductor Research and Development Center
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QUADER Khandker
SanDisk Corporation
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PREFFERL Peter
Siemens, c/o IBM Semiconductor Research and Development Center
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WORDEMAN Matthew
the IBM Semiconductor Research and Development Center
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FUJII Shuso
c/o IBM Semiconductor Research and Development Center
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WATANABE Yohji
Toshiba, c/o IBM semiconductor Research and Development Center, Hopewell Junction
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WONG Hing
IBM Semiconductor Research and Development Center, Hopewell Junction
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DEBROSSE John
IBM Semiconductor Research and Development Center, Hopewell Junction
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FUJII Shuso
Toshiba, c/o IBM semiconductor Research and Development Center, Hopewell Junction
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WORDEMAN Matthew
Toshiba, c/o IBM semiconductor Research and Development Center, Hopewell Junction
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POECHMUELLER Peter
IBM Semiconductor Research and Development Center, Hopewell Junction
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Kato D
Department Of Astronomy Graduate School Of Science The University Of Tokyo
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Wong Hing
Ibm Semiconductor Research And Development Center Hopewell Junction
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Fujii Shuso
Toshiba C/o Ibm Semiconductor Research And Development Center Hopewell Junction
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Debrosse John
Ibm Semiconductor Research And Development Center Hopewell Junction
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Watanabe Yohji
Toshiba C/o Ibm Semiconductor Research And Development Center Hopewell Junction
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Poechmueller Peter
Ibm Semiconductor Research And Development Center Hopewell Junction
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Wordeman Matthew
Toshiba C/o Ibm Semiconductor Research And Development Center Hopewell Junction
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- Letters
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- A 286 mm^2 256 Mb DRAM with ×32Both-Ends DQ
- Fault-Tolerant Designs for 256 Mb DRAM
- Potential Antagonistic Activity of Bifidobacterium adolescentis against Porphyromonas gingivalis in a Hamster Periodontitis Model
- In Vitro Evaluation of Antimicrobial Efficacy of Iontophoresis against Enterococcus faecalis, Candida albicans, Pseudomonas aeruginosa and Bacillus subtilis
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- Liquid SeOCl_2:Nd^ Laser of High Quality
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- Synthesis and Magnetic Properties of Conjugated Radical Polymer