Structural Features of $\Sigma=3$ and 9, [110] GaAs Tilt Grain Boundaries

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概要

• 論文の詳細を見る

• The planar density of coincidence sites appears to be high along the observed boundary planes for the $\Sigma=3$ and 9, [110] GaAs tilt grain boundaries. The polarity in each grain on either side of the tilt grain boundaries has been confirmed by direct or indirect methods. The result indicates that a lower number of anti-site type bonds occur along the boundaries compared to when the polarity of one grain is reversed. Based on high-resolution transmission electron microscopy (HRTEM) analysis of several different symmetric and asymmetric $\Sigma=3$ and 9, [110] tilt grain boundaries in GaAs, models for the atomic structures of these boundaries have been made for the first time; particular atomic arrangements form the structural units of these boundaries.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-07-15

著者

• Cho Nam-hee

  Department Of Materials Science And Engineering Inha University

• Carter C.

  Departmet of Chemical Engineering and Materials Science, University of Minnesota, MN 55455-0132, U.S

• Carter C.

  Department Of Chemical Engineering And Materials Science University Of Minnesota

関連論文

• Structural Features of $\Sigma=3$ and 9, [110] GaAs Tilt Grain Boundaries
• Effect of Hydrogen Dilution on the Nanostructural and Electrooptical Characteristics of Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition

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