Electroluminescence of $\beta$-FeSi2 Light Emitting Devices
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概要
- 論文の詳細を見る
Ion beam synthesised $\beta$-FeSi2 light emitting devices have been fabricated by ion implantation of iron into pre-grown abrupt silicon p–n junctions. Several samples were fabricated by varying the implant conditions and the junction characteristics (layer thickness and doping concentration). Light emission at $\sim 1.5$ $\mu$m was obtained from all devices but the intensity decreased with increasing temperature. The electroluminescence quenching was found to depend on both the iron implant conditions and the characteristics of the p–n junction.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-06-15
著者
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Lourenco M.
School Of Electronics Computing And Mathematics University Of Surrey
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Gwilliam R.
School Of Electronics Computing And Mathematics University Of Surrey
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Homewood K.
School Of Electronics Computing And Mathematics University Of Surrey
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Butler T.
School Of Electronics Computing And Mathematics University Of Surrey
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Kewell A.
School of Electronics, Computing and Mathematics, University of Surrey, Guildford, Surrey, GU2 7XH,
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Kirkby K.
School of Electronics, Computing and Mathematics, University of Surrey, Guildford, Surrey, GU2 7XH,
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Kirkby K.
School Of Electronics Computing And Mathematics University Of Surrey
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Kewell A.
School Of Electronics Computing And Mathematics University Of Surrey
関連論文
- Electroluminescence of $\beta$-FeSi2 Light Emitting Devices
- Microstructural and Optical Properties of Semiconducting MnSi1.7 Synthesized by Ion Implantation