NOx Sensor Using Multi-Layered Semiconducting Thin-Film (特集 環境ガスセンサ)

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概要

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• We have developed a NOx sensor using a multi-layered semiconducting thin-film. The first layer (current conduction region) is composed of Fe2O3 (91mol%), TiO2 (5mol%) and MgO (4mol%), and the second layer (gas sensitive region) is composed of SnO2 (96mol%) and V2O5 (4mol%). The resistance of the sensor increases when it is placed in an air including NO or NO2. The sensor is thus sensitive to both NO and NO2. By doping the SnO2 layer with V2O5 (4mol%), the operating temperature decreases and the sensitivity increases for these gases. The sensor detects NOx at a concentration as low as a few ppm at a relatively low temperature of 200°C. The response times of the sensor to NO and NO2 are 60s and 80s at 350°C, respectively, though they are longer at lower temperatures. The sensor is also sensitive to reducing gases such as C3H8, i-C4H10, C2H4, CO, and H2. These reducing gases, however, can be distinguished from NOx because the resistance of the sensor decreases in these gases. The sensitivity does not degrade for at least 3 months when it is periodically cleaned by a heat treatment at 500°C for 1h.

• 社団法人 電気学会の論文

著者

• Hiwatari Tadao

  Tokyo Denki University

• HARA Kazuhiro

  Tokyo Denki University

関連論文

• NOx Sensor Using Multi-Layered Semiconducting Thin-Film (特集 環境ガスセンサ)

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