H_2 Sensing Properties of Metal Oxide Semiconductors as Varistor-Type Gas Sensors

概要

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Current-voltage characteristics of semiconductive oxides have been investigated in air and in H2 balanced with air at elevated temperatures. A shift in breakdown voltage to a high electric field was observed for Cr2O3, which is a typical p-type semiconductor, upon exposure to H2, while n-type semiconductors exhibited a reverse shift in breakdown voltage. Among oxide specimens, Nb2O5 was found to be the most excellent candidate for a varistor-type sensor, being accompanied with high H2 sensitivity, excellent mechanical strength and good resistance to high electric field. Further investigations have revealed that the H2 sensing properties of Nb2O5 could be improved by 1.0mol% Bi2O3 doping. Newly formed Bi2Nb10O28 phase was suggested to play an important role in enhancing breakdown voltage in air and then the H2 sensitivity.
社団法人電気学会の論文