Characteristics of Nonalloyed Pseudomorphic High Electron Mobility Transistors Using InAs/In_xGa_<1-x>As(x=1→0)/Al_yGa_<1-y>(y=0→0.3)Contact Structures
スポンサーリンク
概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-06-01
著者
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Lan Wen-ho
Materials R&d Center Chung Shan Institute Of Science And Technology
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CHEN Sheu-Shung
Institute of Materials Science and Engineering, National Chiao Tung University
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LIN Chien-Cheng
Institute of Materials Science and Engineering, National Chiao Tung University
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TU Sun-Li
Materials R&D Center, Chung Shan Institute of Science and Technology
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PENG Chin-Kun
Materials R&D Center, Chung Shan Institute of Science and Technology
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Tu Sun-li
Materials R&d Center Chung Shan Institute Of Science And Technology
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Peng Chin-kun
Materials R&d Center Chung Shan Institute Of Science And Technology
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Chen S‐s
National Tsing Hwa Univ. Hsinchu Twn
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Chen Sheu-shung
Institute Of Materials Science And Engineering National Chiao Tung University
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Lin Chien-cheng
Institute Of Materials Science And Engineering National Chiao Tung University