Effects of Tin Doping and Oxygen Vacancies on the Electronic States of Indium Oxide
スポンサーリンク
概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1997-06-01
著者
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Mizuno Masao
Electronics Research Laboratory Technical Development Group Kobe Steel Ltd.
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MIYAMOTO Takashi
Electronics Research Laboratory, Technical Development Group, Kobe Steel, Ltd.
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OHNISHI Takashi
Electronics Research Laboratory, Technical Development Group, Kobe Steel, Ltd.
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HAYASHI Hidetaka
Electronics Research Laboratory, Technical Development Group, Kobe Steel, Ltd.
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Hayashi Hidetaka
Electronics Research Laboratory Technical Development Group Kobe Steel Ltd.
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Ohnishi Takashi
Electronics Research Laboratory Technical Development Group Kobe Steel Ltd.
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Miyamoto Takashi
Electronics Research Laboratory Technical Development Group Kobe Steel Ltd.
関連論文
- Effects of Tin Doping and Oxygen Vacancies on the Electronic States of Indium Oxide
- Effects of Tin Doping and Oxygen Vacancies on the Electronic States of Indium Oxide