Numerical Study of Collector-Base Junction Design for Ultra-High-Speed InP/InGaAs Heterojunction Bipolar Transistors

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概要

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• High-frequency operation of nonplanar and planar InP/InGaAs heterojunction bipolar transistors (HBTs) with various collector doping profiles has been investigated using a Monte Carlo particle simulation. It is shown that vertical scaling of the collector does not provide a substantial improvement in HBT overall speed performance due to the dramatic increase in the collector capacitance charging time with decreasing collector layer thickness. A considerable improvement in HBT high-frequency performance has been obtained in HBTs with buried subcollector and nonuniform collector doping profile.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1996-02-28

著者

• Kulkova Elena

  Research Center "microel

• Khrenov Gregory

  Computer Solid State Physics Laboratory The University Of Aizu

関連論文

• Numerical Study of Collector-Base Junction Design for Ultra-High-Speed InP/InGaAs Heterojunction Bipolar Transistors
• Numerical Study of Collector-Base Junction Design for Ultra-High-Speed InP/InGaAs Heterojunction Bipolar Transistors

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