電子サイクロトロン共鳴プラズマパッタ法によるSnO_2ドープZnO透明導電薄膜の合成
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概要
- 論文の詳細を見る
Transparent and conductive films of SnO<SUB>2</SUB> doped ZnO are prepared by electron cyclotron resonance (ECR) sputtering using ZnO- (1 to 30) mol%SnO<SUB>2</SUB> sintered cylindrical targets in an Ar atmosphere at various substrate temperatures on glass substrate (Corning 7059). The thin films prepared by sputtering wit a ZnO target containing 3 mol%SnO<SUB>2</SUB> show low resistivity and crystal structures of hexagonal ZnO. The electrical resistivity of as sputterd SnO<SUB>2</SUB> doped ZnO films when substrate temperature is 473 K and gas pressure is 2.7 × 10<SUP>-1</SUP> Pa is 6.43 × 10<SUP>-3</SUP> Ωm and decreases down to 1.51 × 10<SUP>-4</SUP> Ωm by a vacuum annealing at 873 K. This film show optical transmission higher than 80% at an wavelength of 600 nm.
- 日本真空協会の論文
- 1998-03-20