スポンサーリンク
Silicon Nanoscale Device Group, Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 2-13 Tsukuba Central, Tsukuba, Ibaraki 305-8568, Japan | 論文著者
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Meishoku Masahara
Silicon Nanoscale Device Group, Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 2-13 Tsukuba Central, Tsukuba, Ibaraki 305-8568, Japan
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Kunihiro Sakamoto
Silicon Nanoscale Device Group, Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 2-13 Tsukuba Central, Tsukuba, Ibaraki 305-8568, Japan
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O'uchi Shinichi
Silicon Nanoscale Device Group, Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 2-13 Tsukuba Central, Tsukuba, Ibaraki 305-8568, Japan
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Takashi Matsukawa
Silicon Nanoscale Device Group, Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 2-13 Tsukuba Central, Tsukuba, Ibaraki 305-8568, Japan
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Yongxun Liu
Silicon Nanoscale Device Group, Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 2-13 Tsukuba Central, Tsukuba, Ibaraki 305-8568, Japan
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Kazuhiko Endo
Silicon Nanoscale Device Group, Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 2-13 Tsukuba Central, Tsukuba, Ibaraki 305-8568, Japan
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Shinichi O'uchi
Silicon Nanoscale Device Group, Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 2-13 Tsukuba Central, Tsukuba, Ibaraki 305-8568, Japan