スポンサーリンク
Tsukuba Laboratory, Taiyo Nippon Sanso Corporation | 論文
- Effects of High-k Passivation Films on AlGaN/GaN HEMT
- p-type InGaN Cap Layer for Normally-off Operation in AlGaN/GaN HFETs
- High Breakdown Voltage AlGaN/GaN MIS-HEMT with TiO_2/Si_3N_4 Gate Insulator
- High Speed AlGaN/GaN MIS-HEMT with High Drain and Gate Breakdown Voltages
- Gate-Length Dependence of DC Characteristics in Submicron-Gate AlGaN/GaN HEMTs