スポンサーリンク
Tokyo Electron AT Ltd., SPA Development and Engineering, 1-8 Fuso-cho, Amagasaki, Hyogo 660-0891, Japan | 論文
- Nitrogen Profile Study for SiON Gate Dielectrics of Advanced Dynamic Random Access Memory
- Characterization of Ultra Thin Oxynitride Formed by Radical Nitridation with Slot Plane Antenna Plasma