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The Institute of Scientific and Industrial Research,Osaka University | 論文
- Initial Stages of GaAs Molecular Beam Epitaxy Growth on Porous Si
- Initial Stages of GaAs MBE Growth on Si(111)(√3×√3)-Ga Surfaces
- Fermi Surface Properties in Sr_2RuO_4
- Fermi Surfance and Yamaji Effect in Sr_2RuO_4
- Effects of Adsorption and Thermal Desorption of Atomic Hydrogen on Electronic and Atomic Structures of Si(111)(√ x √)-Al Surface
- Si (111)(√×√)-Al Surface Studied by Angle-Resolved Electron-Energy-Loss Spectroscopy
- Charge-Balanced Heteroepitaxial Growth of GaAs on Si
- Current Injection Laser Operation of GaAs/InAs Short-Period Superlattice/InP(411) Quantum Dot Laser Diodes with InAlAs Current Blocking Layer
- 1.3-1.5-μm-Wavelength GaAs/InAs Superlattice Quantum-Dot Light-Emitting Diodes Grown on InP (411)A Substrates
- FLAPW Electronic Band Structures of Skutterudite and Filled Skutterudite Compounds
- Addenda to"Crystal Electric Fields for Cubic Point Groups"
- Crystal Electric Fields for Cubic Point Groups : Condensed Matter: Electronic Properties, etc.
- Growth Temperature Dependence of InAs ISlands Grown on GaAs (001) Substrates